A Design Methodology for Reliable MRF-Based Logic Gates

نویسندگانSayyed Mohammad Razavi
نشریهIranian Journal of Electrical and Electronic Engineering
شماره صفحات310-320
شماره سریال3
شماره مجلد15
نوع مقالهFull Paper
تاریخ انتشار2019
رتبه نشریهعلمی - پژوهشی
نوع نشریهچاپی
کشور محل چاپایران
نمایه نشریهisc،Scopus

چکیده مقاله

Probabilistic-based methods have been used for designing noise tolerant circuits recently. In these methods, however, there is not any reliability mechanism that is essential for nanometer digital VLSI circuits. In this paper, we propose a novel method for designing reliable probabilistic-based logic gates. The advantage of the proposed method in comparison with previous probabilistic-based methods is its ultra-high reliability. The proposed method benefits from Markov random field (MRF) as a probabilistic framework and triple modular redundancy (TMR) as a reliability mechanism. A NAND gate is used to show the design methodology. The simulation results verify the noise immunity of the proposed MRF-based gate in the presence of noise. In addition, the values from reliability estimation program show the reliability of 0.99999999 and 0.99941316 for transistor failure rates of 0.0001 and 0.001, respectively, which are much better as compared with previous reported MRF-based designs.

لینک ثابت مقاله

tags: Reliability, Noise Tolerance, Markov Random Field (MRF), Triple Modular Redundancy (TMR).