| Authors | Abolfazl Bijari |
| Journal | Journal of Computational Electronics |
| Page number | 1295-1312 |
| Serial number | 19 |
| Volume number | 3 |
| Paper Type | Full Paper |
| Published At | 2020 |
| Journal Grade | ISI |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
| Journal Index | JCR،Scopus |
Abstract
This paper presents an optimum design of an ultra-wideband (UWB) 2.5–10.5-GHz low-noise amplifer (LNA) in 180-nm
and 65-nm radiofrequency (RF)-complementary metal–oxide–semiconductor (CMOS) technology. A novel input matching
network employing resistive–inductive feedback and a noise-canceling technique is proposed to achieve broadband matching
as well as a low noise fgure (NF). Moreover, a current-reused structure and the inductive peaking technique are applied in
the proposed LNA to reduce its power consumption and provide high, fat gain. The proposed UWB-LNA is optimized using
heuristic multiobjective optimization based on inclined planes system optimization (IPO) and particle swarm optimization
(PSO) as simulation-based evolutionary techniques. The proposed UWB-LNA is designed and simulated using HSPICE
and Cadence Spectre RF. The postlayout simulation results show an input return loss (S11) of less than −10 dB, a fat power
gain (S21) of 13.2±0.5 and 14±0.5 dB, and an NF below 5 and 2.5 dB over the whole UWB band when implemented in
180-nm and 65-nm CMOS technology, respectively. The UWB-LNA consumes 7.2 and 9.5 mW from a 1.8-V power supply
when implemented in 180-nm and 65-nm CMOS technology, respectively.
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