CV


FA
Hossein Farsi

Hossein Farsi

Associate Professor

دانشکده/پردیس: Science

گروه/دانشکده Chemistry

Degree: Ph.D

CV
FA
Hossein Farsi

Associate Professor Hossein Farsi

دانشکده/پردیس: Science - گروه/دانشکده Chemistry Degree: Ph.D |

On the pseudocapacitive behavior of nanostructured molybdenum oxide

AuthorsHossein Farsi,
JournalJOURNAL OF SOLID STATE ELECTROCHEMISTRY
Page number643-650
Serial number1
Volume number14
IF2.509
Paper TypeFull Paper
Published At2010
Journal TypeTypographic
Journal CountryGermany
Journal IndexJCR،Scopus
KeywordsMolybdenum oxide . Nanostructure . Pseudocapacitive behavior. Impedance spectroscopy

Abstract

Nanostructured molybdenum oxide was potentiodynamically deposited onto a stainless steel surface from an aqueous bath by cycling the potential between 0 and −0.75 V vs. Ag/AgCl. The deposit consisted of particulates in the range of 30 to 80 nm. Electrochemical studies under galvanostatic charge/discharge and also impedance spectroscopy revealed capacitive behavior in the potential range of −0.3 to −0.55 V vs. Ag/AgCl with the value of 477 F g−1 at 0.1 mA/cm2 . An equivalent circuit comprising of three parallel branches consisting of double-layer capacitance, Warburg impedance, and a constant phase element signifying pseudo-capacitance each coupled with their corresponding resistances was fitted to the experimental findings, and the magnitudes of the elements were derived