A Distributed Power Amplifier Design with a High Power Gain

Abstract

In this paper we present a distributed power amplifier that has a good gain-bandwidth product in comparison with other recent discrete distributed power amplifiers. A TGF2023-01 bare die transistor with 0.25μm GaN HEMT technology is utilized in our work. Our distributed power amplifier provides a better matching that leads to a more flat frequency response and uses tapering technique for both gate and drain transmission lines to boost the output power and efficiency. This design demonstrates a 41.6 dBm saturated power and a 22.2 dB small signal gain from DC to 3.4 GHz with a power added efficiency (PAE) of 27%.