| Authors | Mehdi Forouzanfar |
|---|---|
| Journal | Majlesi Journal of Telecommunication Devices |
| Page number | 1-4 |
| Serial number | 10 |
| Volume number | 4 |
| Paper Type | Full Paper |
| Published At | 2021 |
| Journal Grade | ISI |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
| Journal Index | isc |
Abstract
This paper presents different steps of simulation and fabrication of a power amplifier, which was realized using a discrete GaN HEMT transistor in the frequency range of 8.8-9.2 GHz. The required wire bonds and matching circuits were characterized using three-dimensional simulations in HFSS and Momentum ADS software. The fabricated power amplifier provides an output power of 3.5W and a power gain of 13 dB.
tags: GaN HEMT, discrete GaN HEMT transistors, matching circuit, output power, X-band