نویسندگان | Mehdi Forouzanfar |
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نشریه | Majlesi Journal of Telecommunication Devices |
شماره صفحات | 1-4 |
شماره سریال | 10 |
شماره مجلد | 4 |
نوع مقاله | Full Paper |
تاریخ انتشار | 2021 |
رتبه نشریه | ISI |
نوع نشریه | چاپی |
کشور محل چاپ | ایران |
نمایه نشریه | isc |
چکیده مقاله
This paper presents different steps of simulation and fabrication of a power amplifier, which was realized using a discrete GaN HEMT transistor in the frequency range of 8.8-9.2 GHz. The required wire bonds and matching circuits were characterized using three-dimensional simulations in HFSS and Momentum ADS software. The fabricated power amplifier provides an output power of 3.5W and a power gain of 13 dB.
tags: GaN HEMT, discrete GaN HEMT transistors, matching circuit, output power, X-band