| نویسندگان | Mehdi Forouzanfar |
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| نشریه | Majlesi Journal of Telecommunication Devices |
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| شماره صفحات | 1-4 |
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| شماره سریال | 10 |
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| شماره مجلد | 4 |
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| نوع مقاله | Full Paper |
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| تاریخ انتشار | 2021 |
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| رتبه نشریه | ISI |
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| نوع نشریه | چاپی |
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| کشور محل چاپ | ایران |
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| نمایه نشریه | isc |
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چکیده مقاله
This paper presents different steps of simulation and fabrication of a power amplifier, which was realized using a discrete GaN HEMT transistor in the frequency range of 8.8-9.2 GHz. The required wire bonds and matching circuits were characterized using three-dimensional simulations in HFSS and Momentum ADS software. The fabricated power amplifier provides an output power of 3.5W and a power gain of 13 dB.
لینک ثابت مقاله
