| Authors | Dadashzadeh Gholamreza,Zafari Sajjad |
| Journal | Photonics and Nanostructures-Fundamentals and Applications |
| Page number | 24-30 |
| Serial number | 34 |
| IF | 1.792 |
| Paper Type | Full Paper |
| Published At | 2019 |
| Journal Grade | ISI |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
| Journal Index | JCR،Scopus |
Abstract
Metallic structures with periodic array of subwavelength slits are well-known to lead to extraordinary optical
transmission (EOT). Excellent power transmission originates from surface waves excited by incident transverse
magnetic wave. Here we show that the metallic structure with array of three-stepped slits can transmit almost
the entire power of incident wave into the substrate at desired optical frequency for low-temperature-grown
gallium arsenide (LT-GaAs) substrate. Transmitted power of the proposed structure is studied both by an analytical
model as well as numerical method by finite element (FEM). It is found that existence of three corners in
the proposed structure can favorably confine generated carriers in the vicinity of the electrodes as this structure
is used in photoconductive antenna (PCA); this feature contributes to increase terahertz (THz) current and
subsequently THz radiation power of PCAs.
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