| نویسندگان | Dadashzadeh Gholamreza,Zafari Sajjad |
| نشریه | Photonics and Nanostructures-Fundamentals and Applications |
| شماره صفحات | 24-30 |
| شماره سریال | 34 |
| ضریب تاثیر (IF) | 1.792 |
| نوع مقاله | Full Paper |
| تاریخ انتشار | 2019 |
| رتبه نشریه | ISI |
| نوع نشریه | چاپی |
| کشور محل چاپ | ایران |
| نمایه نشریه | JCR،Scopus |
چکیده مقاله
Metallic structures with periodic array of subwavelength slits are well-known to lead to extraordinary optical
transmission (EOT). Excellent power transmission originates from surface waves excited by incident transverse
magnetic wave. Here we show that the metallic structure with array of three-stepped slits can transmit almost
the entire power of incident wave into the substrate at desired optical frequency for low-temperature-grown
gallium arsenide (LT-GaAs) substrate. Transmitted power of the proposed structure is studied both by an analytical
model as well as numerical method by finite element (FEM). It is found that existence of three corners in
the proposed structure can favorably confine generated carriers in the vicinity of the electrodes as this structure
is used in photoconductive antenna (PCA); this feature contributes to increase terahertz (THz) current and
subsequently THz radiation power of PCAs.
لینک ثابت مقاله