| نویسندگان | Sayyed Mohammad Razavi |
| نشریه | Iranian Journal of Electrical and Electronic Engineering |
| شماره صفحات | 310-320 |
| شماره سریال | 3 |
| شماره مجلد | 15 |
| نوع مقاله | Full Paper |
| تاریخ انتشار | 2019 |
| رتبه نشریه | علمی - پژوهشی |
| نوع نشریه | چاپی |
| کشور محل چاپ | ایران |
| نمایه نشریه | isc،Scopus |
چکیده مقاله
Probabilistic-based methods have been used for designing noise tolerant circuits
recently. In these methods, however, there is not any reliability mechanism that is essential
for nanometer digital VLSI circuits. In this paper, we propose a novel method for designing
reliable probabilistic-based logic gates. The advantage of the proposed method in
comparison with previous probabilistic-based methods is its ultra-high reliability. The
proposed method benefits from Markov random field (MRF) as a probabilistic framework
and triple modular redundancy (TMR) as a reliability mechanism. A NAND gate is used to
show the design methodology. The simulation results verify the noise immunity of the
proposed MRF-based gate in the presence of noise. In addition, the values from reliability
estimation program show the reliability of 0.99999999 and 0.99941316 for transistor failure
rates of 0.0001 and 0.001, respectively, which are much better as compared with previous
reported MRF-based designs.
لینک ثابت مقاله