Recessed insulator and barrier AlGaN/GaN HEMT A novel structure for improving DC and RF characteristics

AuthorsSeyed-Hamid Zahiri,Hoseini Seyed Ebrahim
JournalPramana - Journal of Physics
Page number58-64
Serial number4
Volume number88
IF0.52
Paper TypeFull Paper
Published At2017
Journal GradeISI
Journal TypeTypographic
Journal CountryIran, Islamic Republic Of
Journal IndexJCR،Scopus

Abstract